PVT Insensitive Reference Current Generation
نویسنده
چکیده
In this paper, supply, process & temperature compensated, low voltage current reference for CMOS integrated circuits is presented. To minimize production cost, it uses no BJTs, external components or trimming procedures. This circuit is designed in Intel-22nm process and evaluated by computer simulations. The circuit behaviour is supported by theoretical expressions and is in agreement with simulation results. A comparison with most current references in the literature shows considerable tolerance improvement. Simulation results show PVT tolerance of +/-10% and 1 standard deviation of 5uA at mean of 82uA. An autonomous, all MOS, low voltage & process technology independent features make it suitable for advanced sub micron processes like 14nm, 10nm & beyond. Keywords— CMOS integrated circuits, current reference, bandgap reference, process and temperature compensation, sub threshold, weak inversion, strong inversion, PTAT, CTAT, BGR.
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